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november 2011 doc id 18353 rev 3 1/18 18 STRH100N6 rad-hard n-channel, 60 v, 80 a power mosfet features fast switching 100% avalanche tested hermetic package 70 krad tid see radiation hardened applications satellite high reliability description this n-channel power mosfet is developed with stmicroelectronics unique stripfet? process. it has specifically been designed to sustain high tid and provide immunity to heavy ion effects. figure 1. internal schematic diagram note: contact st sales office for information about the specific conditions for product in die form and for other packages. v dss i d r ds(on) q g 60 v 80 a 12 m ? 134.4 nc to-254aa 1 2 3 table 1. device summary part numbers escc part number quality level package lead finish mass (g) temp. range eppl STRH100N6hy1 - engineering model to-254aa gold 10 -55 to 150 c - STRH100N6hyg tbd escc flight target www.st.com
contents STRH100N6 2/18 doc id 18353 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STRH100N6 electrical ratings doc id 18353 rev 3 3/18 1 electrical ratings (t c = 25 c unless otherwise specified) table 2. absolute maximum ratings (pre-irradiation) symbol parameter value unit v ds (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-source voltage (v gs = 0) 60 v v gs (2) 2. this value is guaranteed over the full range of temperature. gate-source voltage 20 v i d (3) 3. rated according to the rthj-case + rthc-s. drain current (continuous) at t c = 25 c 80 a i d (3) drain current (continuous) at t c = 100 c 50 a i dm (4) 4. pulse width limited by safe operating area. drain current (pulsed) 320 a p tot (3) total dissipation at t c = 25 c 176 w dv/dt (5) 5. i sd 80 a, di/dt 600 a/s, v dd = 80 %v (br)dss. peak diode recovery voltage slope 2.5 v/ns t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case max 0.50 c/w rthc-s case-to-sink typ 0.21 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 40 a e as (1) single pulse avalanche energy (starting tj= 25 c, id= iar, vdd=40 v) 954 mj e as single pulse avalanche energy (starting tj= 110 c, id= iar, vdd=40 v) 280 mj e ar repetitive avalanche (vdd = 40 v, i ar = 40 a, f = 10 khz, t j = 25 c, duty cycle = 50%) 40 mj
electrical ratings STRH100N6 4/18 doc id 18353 rev 3 e ar repetitive avalanche (vdd = 40 v, i ar = 40 a, f = 100 khz, t j = 25 c, duty cycle = 10%) 24 mj repetitive avalanche (vdd = 40 v, i ar = 40 a, f = 100 khz, t j = 110 c, duty cycle = 10%) 7.7 mj 1. maximum rating value. table 4. avalanche characteristics (continued) symbol parameter value unit
STRH100N6 electrical characteristics doc id 18353 rev 3 5/18 2 electrical characteristics (t c = 25c unless otherwise specified). pre-irradiation table 5. pre-irradation on/off states symbol parameter test conditions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = - 20 v -100 100 na na bv dss (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-to-source breakdown voltage v gs = 0 v, i d = 1 ma 60 v v gs(th) gate threshold voltage v ds =v gs , i d = 1 ma 2 4.5 v r ds(on) static drain-source on resistance v gs = 12 v i d = 40 a 0.012 0.0135 ? table 6. pre-irradation dynamic symbol parameter test conditions min. typ. max. unit c iss c oss (1) c rss 1. this value is guaranteed over the full range of temperature. input capacitance output capacitance reverse transfer capacitance v gs = 0, v ds = 25 v, f=1mhz 3916 864 325 4895 1080 407 5874 1296 488 pf pf pf q g q gs q gd total gate charge gate-to-source charge gate-to-drain (?miller?) charge v dd = 30 v, i d = 80 a, v gs =12 v 107 22 34 134.4 32.5 46.5 161 43 59 nc nc nc r g (2) 2. not tested, guaranteed by process. gate input resistance f=1mhz gate dc bias=0 test signal level= 20 mv open drain 1.6 2 2.4 ?
electrical characteristics STRH100N6 6/18 doc id 18353 rev 3 table 7. pre-irradation switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 30 v, i d = 40 a, r g = 4.7 ?, v gs = 12 v 22 90 62 45 28 115 86 69 34 140 110 93 ns ns ns ns table 8. pre-irradation source drain diode (1) 1. refer to table 16: source drain diode . symbol parameter test conditions min. typ. max. unit i sd i sdm (2) 2. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 80 320 a a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 80 a, v gs = 0 1.1 v t rr (4) q rr (4) i rrm (4) 4. not tested in production, guaranteed by process. reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s v dd = 48 v, tj = 25 c 307 384 4.7 24.6 461 ns c a t rr (4) q rr (4) i rrm (4) reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s v dd = 48 v, tj = 150 c 370 462.4 6.5 28.3 555 ns c a
STRH100N6 radiation characteristics doc id 18353 rev 3 7/18 3 radiation characteristics the technology of stmicroelectronics rad-hard power mosfets is extremely resistant to radiative environments. every manufacturing lot is tested for total ionizing dose (irradiation done according to the escc 22900 specification, window 1.) using the to-3 package. both pre-irradiation and post-irradiation performance are tested and specified using the same circuitry and test conditions in order to provide a direct comparison. (t amb = 22 3 c unless otherwise specified). total dose radiation (tid) testing one bias conditions using the to-3 package: ?v gs bias: + 15 v applied and v ds = 0 v during irradiation the following parameters are measured (see table 9 , table 10 and table 11 ): before irradiation after irradiation after 24 hrs @ room temperature after 168 hrs @ 100 c anneal table 9. post-irradiation on/off states @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values ? unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +10 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -20 v 1.5 -1.5 na bv dss drain-to-source breakdown voltage v gs = 0, i d = 1 ma -15% v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma -60%/ + 25% v r ds(on) static drain-source on resistance v gs = 10 v; i d = 40 a 15 % ? table 10. dynamic post-irradiation @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values ? unit q g total gate charge i g = 1 ma, v gs = 12 v, v ds = 30 v, i ds = 40 a -5% / +50% nc q gs gate-source charge 35 % q gd gate-drain charge -5% / +110%
radiation characteristics STRH100N6 8/18 doc id 18353 rev 3 single event effect, soa the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to heavy ion environment for single event effect (irradiation per mil-std-750e, method 1080 bias circuit in figure 3: single event effect, bias circuit ) seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: seb test: drain voltage checked, trigger level is set to v ds = - 2 v. stop condition: as soon as a seb occurs or if th e fluence reaches 3e+5 ions/cm2. segr test: the gate current is monitored every 100 ms. a gate stress is performed before and after irradiation. stop condition: as soon as the gate current reaches 1 ma (during irradiation or during pigs test) or if the fluence reaches 3e+5 ions/cm2. the results are: ? no seb ? segr test produces the following soa (see table 12: single event effect (see), safe operating area (soa) and figure 2: single event effect, soa ) table 11. source drain diode post-irradiation @ t j = 25 c, (co60 rays 70 k rad(si)) (1) 1. refer to figure 16 . symbol parameter test conditions drift values ? .unit v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 50 a, v gs = 0 5% v table 12. single event effect (see), safe operating area (soa) ion let (mev/(mg/cm 2 ) energy (mev) range (m) v ds (v) @v gs =0 @v gs = -2 v @v gs = -5 v @v gs = -10 v @v gs = -20 v kr 32 768 94 60 48 39 27 15
STRH100N6 radiation characteristics doc id 18353 rev 3 9/18 figure 2. single event effect, soa figure 3. single event effect, bias circuit (a) a. bias condition during radiation refer to table 12: single event effect (see), safe operating area (soa) . 6ds6dsmax 6gs6 +r-e6cmmg 2 2 # p& 5 6 gs # n& # ?& 6 ds !-v
electrical characteristics (curves) STRH100N6 10/18 doc id 18353 rev 3 4 electrical characteristics (curves) figure 4. safe operating area figure 5. thermal impedance figure 6. output characteristics figure 7. transfer characteristics i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s s inlge p u l s e am07261v1 5v 6v 7v v g s =10v i d 150 100 50 0 0 v d s (v) 10 (a) 5 200 250 3 00 3 50 hv 3 2910 i d 10 1 3 .5 4.5 v g s (v) 5.5 (a) 4.0 5.0 100 6.0 v d s = 1. 3 v t j = +150 c t j = 25 c t j = -55 c am07260v1
STRH100N6 electrical characteristics (curves) doc id 18353 rev 3 11/18 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized bv dss vs temperature figure 11. static drain-source on resistance figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature v g s 8 4 0 0 20 q g (nc) (v) 8 0 40 60 12 v d s = 3 0 v 100 120 i d = 8 0 a i d =20 a i d =40 a am00 8 92v1 c 3 000 2000 1000 0 0 20 v d s (v) (pf) 10 4000 3 0 5000 6000 7000 40 50 ci ss co ss cr ss hv 3 29 3 0
electrical characteristics (curves) STRH100N6 12/18 doc id 18353 rev 3 figure 14. source drain-diode forward characteristics
STRH100N6 test circuits doc id 18353 rev 3 13/18 5 test circuits figure 16. source drain diode figure 15. switching times test circuit for resistive load (1) 1. max driver v gs slope = 1v/ns (no dut) figure 17. unclamped inductive load test circuit (single pulse and repetitive) t rr b a ;=of) 2- didt "odydiodereversecurrent) 2- ) &- bodydiodeforwardcurrent !-6
package mechanical data STRH100N6 14/18 doc id 18353 rev 3 6 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 13. to-254aa mechanical data dim. mm inch min. typ. max. min. typ. max. a 13.59 13.84 0.535 0.545 b 13.59 13.84 0.535 0.545 c 20.07 20.32 0.790 0.800 d 6.32 6.60 0.249 0.260 e 1.02 1.27 0.040 0.050 f 3.56 3.81 0.140 0.150 g 16.89 17.40 0.665 0.685 h 6.86 0.270 i 0.89 1.02 1.14 0.035 0.040 0.045 j 3.81 0.150 k 3.81 0.150 l 12.95 14.50 0.510 0.571 m 2.92 3.18 n0.71 r1 1.00 0.039 r2 1.52 1.65 1.78 0.060 0.065 0.070
STRH100N6 package mechanical data doc id 18353 rev 3 15/18 figure 18. to-254aa drawing
order codes STRH100N6 16/18 doc id 18353 rev 3 7 order codes contact st sales office for information about the specific conditions for products in die form and for other packages. table 14. ordering information order codes escc part number quality level eppl package lead finish marking packing STRH100N6hy1 - engineer model - to-254aa gold STRH100N6fsy1 + beo strip pack STRH100N6hyg tbd escc flight target tbd
STRH100N6 revision history doc id 18353 rev 3 17/18 8 revision history table 15. document revision history date revision changes 04-jan-2011 1 first release. 27-jul-2011 2 updated order codes in table 1: device summary and table 14: ordering information . minor text changes. 09-nov-2011 3 updated dynamic values on table 6: pre-irradation dynamic and table 7: pre-irradation switching times .
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